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Study of the effect of switching speed of the a-SiC/c-Si (p)-based, thyristor-like, ultra-high-speed switches, using two-dimensional simulation techniques
Evangelos I. Dimitriadis, Nikolaos Georgoulas
Journal of Semiconductors, 2017, 38(5): 054001. doi: 10.1088/1674-4926/38/5/054001
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Fabrication of SiC nanowire thin-film transistors using dielectrophoresis
Dai Zhenqing, Zhang Liying, Chen Changxin, Qian Bingjian, Xu Dong, et al.
Journal of Semiconductors, 2012, 33(11): 114001. doi: 10.1088/1674-4926/33/11/114001
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Influence of absorber doping in a-SiC:H/a-Si:H/a-SiGe:H solar cells
Muhammad Nawaz, Ashfaq Ahmad
Journal of Semiconductors, 2012, 33(4): 042001. doi: 10.1088/1674-4926/33/4/042001
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Influence of sputtering pressure on optical constants of a-GaAs1-xNx thin films
Jia Baoshan, Wang Yunhua, Zhou Lu, Bai Duanyuan, Qiao Zhongliang, et al.
Journal of Semiconductors, 2012, 33(8): 083002. doi: 10.1088/1674-4926/33/8/083002
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Effect of n Doped Layers in an Amorphous Silicon Top Solar Cell on the Performance of "Micromorph" Tandem Solar Cells
Han Xiaoyan, Li Guijun, Hou Guofu, Zhang Xiaodan, Zhang Dekun, et al.
Journal of Semiconductors, 2008, 29(8): 1548-1551.
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A Structural Investigation of 3C-SiC Film Hetero-Epitaxial Grown on 6H-SiC Substrate
Lin Tao, Li Qingmin, Li Lianbi, Yang Ying, Chen Zhiming, et al.
Journal of Semiconductors, 2008, 29(5): 936-939.
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Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD
Ma Tieying, Li Tie, Liu Wenping, Wang Yuelin
Journal of Semiconductors, 2008, 29(11): 2265-2269.
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Mechanism of Thermal Oxidation of 3C.SiC Grown on Si
Zhao Yongmei, Sun Guosheng, Liu Xingfang, Li Jiaye, Zhao Wanshun, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 4-3.
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Fast Epitaxy of 3C-SiC Grown on Si Substrate
Li Jiaye, Zhao Yongmei, Liu Xingfang, Sun Guosheng, Wang Lei, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 218-220.
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Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate
Li Lianbi, Chen Zhiming, Pu Hongbin, Lin Tao, Li Jia, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 123-126.
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Analysis of Interface Luminescence in Nano-Sized Amorphous Silicon
Fu Guangsheng, Zhang Jiangyong, Ding Wenge, Lü Xueqin, Yu Wei, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 91-94.
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Optical Properties of Ultralong Hexagonal Polytype Nano-Silicon Carbide Rod
Zhang Hongtao, Chen Kun, Lemmer U, Bastian G
Chinese Journal of Semiconductors , 2006, 27(S1): 117-119.
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Deposition of SiCN Nano-Films by Sputtering Method on Quartz Substrate
Lin Hongfeng, Xie Erqing, Zhang Jun, Yan Xiaoqin, 陈支勇, et al.
Chinese Journal of Semiconductors , 2006, 27(S1): 124-126.
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14 |
Tight Binding of Photoluminescence in the SiC/nc-Si Multi-Layer Film
Liang Zhijun, Wang Zhibin, Wang Li, Zhao Fuli, Yang Shenghong, et al.
Chinese Journal of Semiconductors , 2006, 27(S1): 72-75.
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Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction
Zhang Lin, Zhang Yimen, Zhang Yuming, Tang Xiaoyan
Chinese Journal of Semiconductors , 2006, 27(S1): 378-380.
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硅基AlN薄膜制备技术与测试分析
于毅, 任天令, 刘理天
Chinese Journal of Semiconductors , 2005, 26(1): 42-45.
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Growth of (111) Textured 3C-SiC on Si (111) by Low Energy Ion Beam Deposition
Yang Fei, Chen Nuofu, Zhang Xingwang, Yang Shaoyan, Liu Zhikai, et al.
Chinese Journal of Semiconductors , 2005, 26(12): 2385-2389.
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用透过率测试曲线确定半导体薄膜的光学常数和厚度
沈伟东, 刘旭, 朱勇, 邹桐, 叶辉, et al.
Chinese Journal of Semiconductors , 2005, 26(2): 335-340.
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溅射参数对Ge_2Sb_2Te_5薄膜光学常数的影响
Chinese Journal of Semiconductors , 2001, 22(2): 187-192.
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20 |
硅中离子注入层光学常数的振荡分布
Chinese Journal of Semiconductors , 1982, 3(1): 76-79.
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