Chin. J. Semicond. > 1998, Volume 19 > Issue 6 > 477-480

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不同温度下快速热退火对SiGe量子阱光致发光谱的影响

司俊杰 , 杨沁清 , 王红杰 , 雷红兵 , 滕达 , 王启明 , 刘学锋 and 李建民

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    Received: 18 August 2015 Revised: Online: Published: 01 June 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(6): 477-480
      司俊杰, 杨沁清, 王红杰, 雷红兵, 滕达, 王启明, 刘学锋, 李建民. 不同温度下快速热退火对SiGe量子阱光致发光谱的影响[J]. 半导体学报(英文版), 1998, 19(6): 477-480.
      Citation:
      司俊杰, 杨沁清, 王红杰, 雷红兵, 滕达, 王启明, 刘学锋, 李建民. 不同温度下快速热退火对SiGe量子阱光致发光谱的影响[J]. 半导体学报(英文版), 1998, 19(6): 477-480.
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      • Received Date: 2015-08-18

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