Chin. J. Semicond. > 1982, Volume 3 > Issue 3 > 208-214
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绝缘边界对扩展电阻测量的影响

陈存礼

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(3): 208-214
      陈存礼. 绝缘边界对扩展电阻测量的影响[J]. 半导体学报(英文版), 1982, 3(3): 208-214.
      Citation:
      陈存礼. 绝缘边界对扩展电阻测量的影响[J]. 半导体学报(英文版), 1982, 3(3): 208-214.
      shu

      • Received Date: 2015-08-20

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