Chin. J. Semicond. > 2000, Volume 21 > Issue 2 > 161-168
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薄膜SOI RESURF结构击穿电压分析

李文宏 and 罗晋生

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Key words: SOI, RESURF, 击穿电压

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(2): 161-168
      李文宏, 罗晋生. 薄膜SOI RESURF结构击穿电压分析[J]. 半导体学报(英文版), 2000, 21(2): 161-168.
      Citation:
      李文宏, 罗晋生. 薄膜SOI RESURF结构击穿电压分析[J]. 半导体学报(英文版), 2000, 21(2): 161-168.
      shu

      • Received Date: 2015-08-20

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