Chin. J. Semicond. > 1999, Volume 20 > Issue 8 > 639-643
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用MOCVD在ZnO/Al_2O_3衬底上生长GaN及其特性

毛祥军 , 杨志坚 , 李景 , 屈建勤 and 张国义

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    Received: 20 August 2015 Revised: Online: Published: 01 August 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(8): 639-643
      毛祥军, 杨志坚, 李景, 屈建勤, 张国义. 用MOCVD在ZnO/Al_2O_3衬底上生长GaN及其特性[J]. 半导体学报(英文版), 1999, 20(8): 639-643.
      Citation:
      毛祥军, 杨志坚, 李景, 屈建勤, 张国义. 用MOCVD在ZnO/Al_2O_3衬底上生长GaN及其特性[J]. 半导体学报(英文版), 1999, 20(8): 639-643.
      shu

      • Received Date: 2015-08-20

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