Chin. J. Semicond. > 1996, Volume 17 > Issue 4 > 252-256
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MOVPE生长Al_（0．35）Ga_（0．65）As／GaAs量子阱结构的光致发光

董建荣，陆大成，汪度，王晓晖，刘祥林，王占国

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    Received: 18 August 2015 Revised: Online: Published: 01 April 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(4): 252-256
      董建荣，陆大成，汪度，王晓晖，刘祥林，王占国. MOVPE生长Al_（0．35）Ga_（0．65）As／GaAs量子阱结构的光致发光[J]. 半导体学报(英文版), 1996, 17(4): 252-256.
      Citation:
      董建荣，陆大成，汪度，王晓晖，刘祥林，王占国. MOVPE生长Al_（0．35）Ga_（0．65）As／GaAs量子阱结构的光致发光[J]. 半导体学报(英文版), 1996, 17(4): 252-256.
      shu

      • Received Date: 2015-08-18

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