Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 885-887
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GaAs MESFET旁栅迟滞现象与沟道电流数据采集时间的关系

丁勇 , 赵福川 , 毛友德 , 夏冠群 and 赵建龙

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Key words: 旁栅效应, 沟道电流, 迟滞现象, EL2深能级

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 885-887
      丁勇, 赵福川, 毛友德, 夏冠群, 赵建龙. GaAs MESFET旁栅迟滞现象与沟道电流数据采集时间的关系[J]. 半导体学报(英文版), 2001, 22(7): 885-887.
      Citation:
      丁勇, 赵福川, 毛友德, 夏冠群, 赵建龙. GaAs MESFET旁栅迟滞现象与沟道电流数据采集时间的关系[J]. 半导体学报(英文版), 2001, 22(7): 885-887.
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      • Received Date: 2015-08-20

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