Chin. J. Semicond. > 1986, Volume 7 > Issue 5 > 489-496
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硅中碳含量对缺陷成核的影响

谭淞生 , 沈金媛 and 李月珍

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    陆德仁，朱德光. MOS结构低温负偏压温度不稳定性[J]. 半导体学报(英文版), 1994, 15(4): 277-284.
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    Received: 20 August 2015 Revised: Online: Published: 01 May 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(5): 489-496
      谭淞生, 沈金媛, 李月珍. 硅中碳含量对缺陷成核的影响[J]. 半导体学报(英文版), 1986, 7(5): 489-496.
      Citation:
      谭淞生, 沈金媛, 李月珍. 硅中碳含量对缺陷成核的影响[J]. 半导体学报(英文版), 1986, 7(5): 489-496.
      shu

      • Received Date: 2015-08-20

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