Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1132-1136

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Key words: SiC, 击穿特性, 金属半导体场效应晶体管

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    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

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      吕红亮, 张义门, 张玉明, 杨林安. 4H-SiC功率MESFET的击穿特性[J]. 半导体学报(英文版), 2004, 25(9): 1132-1136.
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      吕红亮, 张义门, 张玉明, 杨林安. 4H-SiC功率MESFET的击穿特性[J]. 半导体学报(英文版), 2004, 25(9): 1132-1136.

      • Received Date: 2015-08-19

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