Citation: |
吕红亮, 张义门, 张玉明, 杨林安. 4H-SiC功率MESFET的击穿特性[J]. 半导体学报(英文版), 2004, 25(9): 1132-1136.
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Proportional views
Key words: SiC, 击穿特性, 金属半导体场效应晶体管
Article views: 1972 Times PDF downloads: 1301 Times Cited by: 0 Times
Received: 19 August 2015 Revised: Online: Published: 01 September 2004
Citation: |
吕红亮, 张义门, 张玉明, 杨林安. 4H-SiC功率MESFET的击穿特性[J]. 半导体学报(英文版), 2004, 25(9): 1132-1136.
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