Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 91-93

NiCr Nanometer thin film for pressure sensors

Peng Yinqiao, Zhou Jicheng, Long Sirui and Zhou Hongguang

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Abstract: Nanometer thin film strain resistance is manufactured directly on the metallic elastic substrate by ion-beam sputtering technology and semiconductor micro-machining technology, Which achieve atomic union betWeen sensitive element and elastic substrate. This effectively solves the technical problem about Nzero drift H of the traditional pressure sensors, and makes pressure sensors be stable and reliable for long-term on condition of harsh environment, such as high temperature and vibration and so on.

Key words: nanometer thin film ion-beam sputtering pressure sensors long-term stability

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Peng Yinqiao, Zhou Jicheng, Long Sirui, Zhou Hongguang. NiCr Nanometer thin film for pressure sensors[J]. Journal of Semiconductors, 2003, 24(S1): 91-93. ****Peng Y Q, Zhou J C, Long S R, Zhou H G. NiCr Nanometer thin film for pressure sensors[J]. Chin. J. Semicond., 2003, 24(S1): 91.
      Citation:
      Peng Yinqiao, Zhou Jicheng, Long Sirui, Zhou Hongguang. NiCr Nanometer thin film for pressure sensors[J]. Journal of Semiconductors, 2003, 24(S1): 91-93. ****
      Peng Y Q, Zhou J C, Long S R, Zhou H G. NiCr Nanometer thin film for pressure sensors[J]. Chin. J. Semicond., 2003, 24(S1): 91.

      NiCr Nanometer thin film for pressure sensors

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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