| Citation: |
Li Ruizhen, Han Zhengsheng. An Analytical Threshold Voltage Model for Fully Depleted SOI MOSFETs[J]. Journal of Semiconductors, 2005, 26(12): 2303-2308.
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Li R Z, Han Z S. An Analytical Threshold Voltage Model for Fully Depleted SOI MOSFETs[J]. Chin. J. Semicond., 2005, 26(12): 2303.
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An Analytical Threshold Voltage Model for Fully Depleted SOI MOSFETs
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Abstract
A new two-dimensional (2D) analytical model for the threshold-voltage of fully depleted SOI MOSFETs is derived.The 2D potential distribution functions in the active layer of the devices are obtained through solving the 2D Poisson’s equation.The minimum of the potential at the oxide-Si layer interface is used to monitor the threshold voltage of the SOI MOSFETs.This model is verified by its excellent agreement with MEDICI simulation using SOI MOSFETs with different gate lengths,gate oxide thicknesses,silicon film thicknesses,and channel doping concentrations. -
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