| Citation: |
Wang Baozhu, Wang Xiaoliang, Wang Xiaoyan, Wang Xinhua, Guo Lunchun, Xiao Hongling, Wang Junxi, Liu Hongxin, Zeng Yiping, Li Jinmin. RF-MBE Growth of InAlGaN Epilayer on Sapphire Substrate[J]. Journal of Semiconductors, 2006, 27(8): 1382-1385.
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Wang B Z, Wang X L, Wang X Y, Wang X H, Guo L C, Xiao H L, Wang J X, Liu H X, Zeng Y P, Li J M. RF-MBE Growth of InAlGaN Epilayer on Sapphire Substrate[J]. Chin. J. Semicond., 2006, 27(8): 1382.
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RF-MBE Growth of InAlGaN Epilayer on Sapphire Substrate
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Abstract
A single crystalline InAlGaN film is successfully grown on a sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy.The streaky RHEED pattern observed during growth indicates a layer-by-layer growth mode.Rutherford backscattering spectrometry (RBS) shows that the In,Al,and Ga contents in the InAlGaN film are 2%,22%,and 76%, respectively.Triple-axis X-ray diffraction shows that the full width at half maximum of the InAlGaN (0002) peak is 4.8′.There are some mountain-like hillocks and pits on the surface of the InAlGaN film.Atomic-force microscopy shows that the RMS of the InAlGaN film is 2.2nm.Photoconductance measurements show that the energy gap of InAlGaN film is 3.76eV. -
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