Chin. J. Semicond. > 2004, Volume 25 > Issue 6 > 735-740
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源区浅结SOI MOSFET的辐照效应模拟

赵洪辰 , 海潮和 , 韩郑生 and 钱鹤

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Key words: 源区浅结, 不对称SOI MOSFET, 辐照效应

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(6): 735-740
      赵洪辰, 海潮和, 韩郑生, 钱鹤. 源区浅结SOI MOSFET的辐照效应模拟[J]. 半导体学报(英文版), 2004, 25(6): 735-740.
      Citation:
      赵洪辰, 海潮和, 韩郑生, 钱鹤. 源区浅结SOI MOSFET的辐照效应模拟[J]. 半导体学报(英文版), 2004, 25(6): 735-740.
      shu

      • Received Date: 2015-08-19

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