Chin. J. Semicond. > 2005, Volume 26 > Issue 10 > 1975-1978
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MOS结构热载子注入与总剂量辐照响应的相关性

余学峰 , 任迪远 , 艾尔肯 , 张国强 , 陆妩 and 郭旗

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Key words: 热载子注入, 总剂量辐照, 相关性

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(10): 1975-1978
      余学峰, 任迪远, 艾尔肯, 张国强, 陆妩, 郭旗. MOS结构热载子注入与总剂量辐照响应的相关性[J]. 半导体学报(英文版), 2005, 26(10): 1975-1978.
      Citation:
      余学峰, 任迪远, 艾尔肯, 张国强, 陆妩, 郭旗. MOS结构热载子注入与总剂量辐照响应的相关性[J]. 半导体学报(英文版), 2005, 26(10): 1975-1978.
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      • Received Date: 2015-08-19

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