Abstract: Separate-confinement heterostructures(SCH) of 100μm-wide-stripe GaAsP/AlGaAs quantum-well lasers emitting at a wavelength of 808nm are analyzed and designed theoretically.Choosing three cases of Al-content of the waveguide layer and the cladding layer,we calculate and analyze the dependences of the optical confinement factor,maximal output power,vertical divergence angle,and threshold current density on the thickness of the waveguide layer.Calculated results show that when the Al-content of the waveguide and cladding layers are 0.4 and 0.5 respectively,a maximal output power of 11.2W,vertical divergence angle of 19°,and threshold current density of 266A/cm2 can be achieved by adapting narrow waveguide layers;further,a maximal output power of 9.4W,vertical divergence angle of 32°,and threshold current density of 239A/cm2 can be obtained by adapting broad waveguide layers.

Key words: high-power 808nm semiconductor laser, GaAsP/AlGaAs quantum-well laser, separate-confinement heterostructure