Chin. J. Semicond. > 2000, Volume 21 > Issue 7 > 652-656
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衬底温度和生长速率对MBE自组织生长In_xGa_(1-x)As/GaAsQD的影响

于磊 , 曾一平 , 潘量 , 孔梅影 , 李晋闽 , 李灵霄 and 周宏伟

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Key words: In_xGa_(1-x)As/GaAs量子点(QD), 自组织生长, 衬底温度, 生长速率

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(7): 652-656
      于磊, 曾一平, 潘量, 孔梅影, 李晋闽, 李灵霄, 周宏伟. 衬底温度和生长速率对MBE自组织生长In_xGa_(1-x)As/GaAsQD的影响[J]. 半导体学报(英文版), 2000, 21(7): 652-656.
      Citation:
      于磊, 曾一平, 潘量, 孔梅影, 李晋闽, 李灵霄, 周宏伟. 衬底温度和生长速率对MBE自组织生长In_xGa_(1-x)As/GaAsQD的影响[J]. 半导体学报(英文版), 2000, 21(7): 652-656.
      shu

      • Received Date: 2015-08-20

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