Chin. J. Semicond. > 1991, Volume 12 > Issue 12 > 715-720

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垂直电场中GaAs-Ga_(1-x)Al_xAs量子阱内类氢杂质束缚能计算

李树深

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(12): 715-720
      李树深. 垂直电场中GaAs-Ga_(1-x)Al_xAs量子阱内类氢杂质束缚能计算[J]. 半导体学报(英文版), 1991, 12(12): 715-720.
      Citation:
      李树深. 垂直电场中GaAs-Ga_(1-x)Al_xAs量子阱内类氢杂质束缚能计算[J]. 半导体学报(英文版), 1991, 12(12): 715-720.
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      • Received Date: 2015-08-19

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