Chin. J. Semicond. > 2001, Volume 22 > Issue 11 > 1429-1433
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离子束外延生长半导体性锰硅化合物

杨君玲 , 陈诺夫 , 刘志凯 , 杨少延 , 柴春林 , 廖梅勇 and 何宏家

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Key words: 半导体性锰硅化物, 硅单晶, 质量分析的低能离子束

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(11): 1429-1433
      杨君玲, 陈诺夫, 刘志凯, 杨少延, 柴春林, 廖梅勇, 何宏家. 离子束外延生长半导体性锰硅化合物[J]. 半导体学报(英文版), 2001, 22(11): 1429-1433.
      Citation:
      杨君玲, 陈诺夫, 刘志凯, 杨少延, 柴春林, 廖梅勇, 何宏家. 离子束外延生长半导体性锰硅化合物[J]. 半导体学报(英文版), 2001, 22(11): 1429-1433.
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      • Received Date: 2015-08-20

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