| Citation: |
Liu Zhe, Wang Xiaoliang, Wang Junxi, Hu Guoxin, Li Jianping, Zeng Yiping, Li Jinmin. Morphology of GaN Film on Si(1 l 1) Substrate Using AIN Buffer[J]. Journal of Semiconductors, 2007, 28(S1): 230-233.
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Liu Z, Wang X L, Wang J X, Hu G X, Li J P, Zeng Y P, Li J M. Morphology of GaN Film on Si(1 l 1) Substrate Using AIN Buffer[J]. Chin. J. Semicond., 2007, 28(S1): 230.
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Morphology of GaN Film on Si(1 l 1) Substrate Using AIN Buffer
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Abstract
Specific morphology of GaN grown on Si substrate was investigated by SEM，EDS，AFM et a1.The research on growth mode and formed mechanism of GaN using/kiN as a buffer were also performed.It was also found that the thickness of the buffer and growth temperature of GaN had very important influence on crack and surface defects of GaN.-
Keywords:
- Si substrate,
- AIN buffer,
- GaNl morphology,
- defects,
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References
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Proportional views
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