| Citation: |
Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, Li Ding, Li Rui, Yang Zhijian, Zhang Guoyi, Hu Xiaodong. Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN[J]. Journal of Semiconductors, 2008, 29(8): 1475-1478.
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Zhang X M, Wang Y J, Yang Z W, Liao H, Chen W H, Li D, Li R, Yang Z J, Zhang G Y, Hu X D. Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN[J]. J. Semicond., 2008, 29(8): 1475.
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Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN
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Abstract
p-type conductivity and crystal quality of Mg-doped GaN grown by MOCVD have been improved through optimization of the magnesium flow rate.The hole concentration first increased and then decreased with the magnesium flow rate while the mobility decreased monotonously.The optimum sample reached a hole concentration of 4.1E17cm-3 and a resistivity of 1Ω·cm.Based on a self-compensation model involving the deep donor MGaVN,we calculate the hole concentration as a function of magnesium doping concentration NA,which indicates that the self-compensation coefficient increases with NA;the hole concentration first increases with NA and reaches a maximum at NA≈4E19,then decreases rapidly as doping concentration increases.XRD also indicate that dislocation density decreased as magnesium flow rate decreased.-
Keywords:
- p-GaN,
- self-compensation,
- magnesium doping,
- MOCVD
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References
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Proportional views
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