Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 947-950
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薄膜全耗尽SOICMOS器件和电路

孙海锋 , 刘新宇 and 海潮和

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Key words: SOICMOS器件, 全耗尽, 双栅, 注Ge硅化物

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 947-950
      孙海锋, 刘新宇, 海潮和. 薄膜全耗尽SOICMOS器件和电路[J]. 半导体学报(英文版), 2001, 22(7): 947-950.
      Citation:
      孙海锋, 刘新宇, 海潮和. 薄膜全耗尽SOICMOS器件和电路[J]. 半导体学报(英文版), 2001, 22(7): 947-950.
      shu

      • Received Date: 2015-08-20

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