Chin. J. Semicond. > 2004, Volume 25 > Issue 4 > 454-457
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新型双异质结双平面掺杂功率PHEMT

陈震 , 和致经 , 魏珂 , 刘新宇 and 吴德馨

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Key words: PHEMT, 双平面掺杂, 双选择腐蚀栅槽, 击穿电压

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(4): 454-457
      陈震, 和致经, 魏珂, 刘新宇, 吴德馨. 新型双异质结双平面掺杂功率PHEMT[J]. 半导体学报(英文版), 2004, 25(4): 454-457.
      Citation:
      陈震, 和致经, 魏珂, 刘新宇, 吴德馨. 新型双异质结双平面掺杂功率PHEMT[J]. 半导体学报(英文版), 2004, 25(4): 454-457.
      shu

      • Received Date: 2015-08-19

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