| Citation: |
Han Dejun, Sun Caiming, Sheng Liyan, Zhang Xiurong, Zhang Haijun, Yan Fengzhang, Yang Ru, Zhang Lu, Ning Baojun. High Linearity Float-Zone Silicon Phototransistors with High Sensitivity and Stability[J]. Journal of Semiconductors, 2006, 27(S1): 223-226.
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Han D J, Sun C M, Sheng L Y, Zhang X R, Zhang H J, Yan F Z, Yang R, Zhang L, Ning B J. High Linearity Float-Zone Silicon Phototransistors with High Sensitivity and Stability[J]. Chin. J. Semicond., 2006, 27(13): 223.
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High Linearity Float-Zone Silicon Phototransistors with High Sensitivity and Stability
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Abstract
A float zone silicon phototransistor is fabricated with sensitivity of 38A/W for light of wavelength 0.83μm and optical power of 0.15nW.This demonstrates that the linearity reaches the highest when the base of the phototransistor is completely depleted,and the fitting goodness of output is 0.9954 over a 40dB range from 0.15 to 1500nW.The stability of 1% in the sensitivity for the punch through phototransistor with an internal current conversion gain of 130 can be obtained if the bias voltage and operating temperature can be stable to about 2.5%(1V in 40V) and the temperature to ±2℃.The stability is better than that of reported APD which had a similar gain.-
Keywords:
- phototransistor,
- float zone silicon,
- sensitivity,
- linearity
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References
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Proportional views
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