| Citation: |
Yang Fei, Chen Nuofu, Zhang Xingwang, Yang Shaoyan, Liu Zhikai, Chai Chunlin, Hou Zhezhe, Ma Hui, Yin Zhigang. Growth of (111) Textured 3C-SiC on Si (111) by Low Energy Ion Beam Deposition[J]. Journal of Semiconductors, 2005, 26(12): 2385-2389.
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Yang F, Chen N F, Zhang X W, Yang S Y, Liu Z K, Chai C L, Hou Z Z, Ma H, Yin Z G. Growth of (111) Textured 3C-SiC on Si (111) by Low Energy Ion Beam Deposition[J]. Chin. J. Semicond., 2005, 26(12): 2385.
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Growth of (111) Textured 3C-SiC on Si (111) by Low Energy Ion Beam Deposition
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Abstract
The (111) textured cubic silicon carbide (3C-SiC) thin films are deposited on (111) Si substrates using the mass-selected ion beam deposition technique at various substrate temperatures.These films are characterized by X-ray photoelectron spectroscopy,Auger electron spectroscopy,and X-ray diffraction.The carbon ions are reacted with the Si substrates and the amorphous Si-C layers are obtained at room temperature and 400℃,respectively,while the (111) textured 3C-SiC films are formed at 800℃.In addition,the mechanism of SiC formation is also discussed based on the diffusion process.The SiC thin films are much thicker than those predicted by TRIM, due to the channel effect and the enhanced diffusion caused by implanted ions with certain energies at high substrate temperatures.-
Keywords:
- 3C-SiC,
- ion beam deposition,
- (111) textured films,
- low energy,
- diffusion,
- channel effect
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References
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Proportional views
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