| Citation: |
Ren Zheng, Hu Shaojian, Jiang Bin, Wang Yong, Zhao Yuhang. Extraction of Temperature Parameters and Optimization of the Mextram 504 Model on SiGe HBT[J]. Journal of Semiconductors, 2008, 29(5): 960-964.
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Ren Z, Hu S J, Jiang B, Wang Y, Zhao Y H. Extraction of Temperature Parameters and Optimization of the Mextram 504 Model on SiGe HBT[J]. J. Semicond., 2008, 29(5): 960.
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Extraction of Temperature Parameters and Optimization of the Mextram 504 Model on SiGe HBT
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Abstract
In this work,our modeling research focuses on two-step Ge profile base SiGe heterojunction bipolar transistors (HBTs) manufactured by IMEC advanced 0.13μm quasi-self-aligned SiGe BiCMOS process technology.From 25℃ to 125℃,measurements including Early voltage plots and Gummel plots of the SiGe HBT are taken and all parameters of the temperature scalable Mextram 504 model are extracted.Based on this,a complete solution of the temperature scalable modeling work is explored.The extracting method of the temperature scalable Mextram 504 model is improved and an optimized flow of model extraction for a 0.13μm two-step Ge profile base SiGe HBT is suggested.The temperature impacted characteristics of the avalanche current are discussed and new temperature scaling parameters of the avalanche current are presented.Simulation of the Mextram model for SiGe HBTs at different temperatures becomes more accurate.-
Keywords:
- Mextram model,
- 0.13μm SiGe process,
- HBT,
- parameter extraction
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References
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