| Citation: |
Chen Sheng, 李志宏, Li Zhihong, Zhang Guobing, Guo Hui, Wang Yu. Etching Characteristics of PECVD SiC[J]. Journal of Semiconductors, 2006, 27(S1): 381-384.
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Chen S, Li Z H, Zhang G B, Guo H, Wang Y. Etching Characteristics of PECVD SiC[J]. Chin. J. Semicond., 2006, 27(13): 381.
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Etching Characteristics of PECVD SiC
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Abstract
In this paper,we use reactive ion etching (RIE) and inductive coupled plasma reactive ion etching (ICP) method to test the etching characteristics in PECVD SiC under different pressures and powers.We prove the feasibility of using SF6 and He to etch PECVD SiC,discuss the relationship between pressure/power and etch rate in RIE,investigate the influence of hydrogen content in PECVD SiC etch rate under certain parameters,testify the existence of load efficiency in ICP. -
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