Chin. J. Semicond. > 2007, Volume 28 > Issue 11 > 1674-1678
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GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz

Hao Yue, Yue Yuanzheng, Feng Qian, Zhang Jincheng, Ma Xiaohua and Ni Jinyu

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Abstract: We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic-layer deposited (ALD) Al2O3 as the gate dielectric.Through decreasing the thickness of the gate oxide to 3.5nm,a device with maximum transconductance of 130mS/mm is produced.The drain current of this 1μm gate-length MOS-HEMT can reach 720mA/mm at +3.0V gate bias.The unity current gain cutoff frequency and maximum frequency of oscillation are obtained as 10.1 and 30.8GHz,respectively.

Key words: AlGaN/GaN, MOS-HEMT, ultrathin Al2O3

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    Received: 18 August 2015 Revised: 02 July 2007 Online: Published: 01 November 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(11): 1674-1678
      Hao Yue, Yue Yuanzheng, Feng Qian, Zhang Jincheng, Ma Xiaohua, Ni Jinyu. GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz[J]. Journal of Semiconductors, 2007, 28(11): 1674-1678. ****Hao Y, Yue Y Z, Feng Q, Zhang J C, Ma X H, Ni J Y. GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz[J]. Chin. J. Semicond., 2007, 28(11): 1674.
      Citation:
      Hao Yue, Yue Yuanzheng, Feng Qian, Zhang Jincheng, Ma Xiaohua, Ni Jinyu. GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz[J]. Journal of Semiconductors, 2007, 28(11): 1674-1678. ****
      Hao Y, Yue Y Z, Feng Q, Zhang J C, Ma X H, Ni J Y. GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz[J]. Chin. J. Semicond., 2007, 28(11): 1674.
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      GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071, China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071, China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071, China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071, China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071, China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-05-23
      • Revised Date: 2007-07-02
      • Published Date: 2007-10-24

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