| Citation: |
Yu Lijuan, Zhao Hongquan, Du Yun, Li Jing, Huang Yongzhen. CW InP-InGaAsP Quantum-Well Laser on Si Fabricated by Wafer Bonding[J]. Journal of Semiconductors, 2007, 28(7): 1117-1120.
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Yu L J, Zhao H Q, Du Y, Li J, Huang Y Z. CW InP-InGaAsP Quantum-Well Laser on Si Fabricated by Wafer Bonding[J]. Chin. J. Semicond., 2007, 28(7): 1117.
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CW InP-InGaAsP Quantum-Well Laser on Si Fabricated by Wafer Bonding
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Abstract
A 1.55μm InP-InGaAsP quantum-well laser was fabricated on Si substrate by low-temperature wafer bonding,which lases at room temperature with electrical pumping.The InP epitaxy was designed and grown by MOCVD,then bonded to Si wafer.Finally,the laser with ridge-waveguide and edge-emission was fabricated.This laser runs continuous-wave with a threshold current of 48mA (current density of 1.65kA/cm2),differential resistance of 5.8W at the threshold current,and a maximum output power of 15mW at 220mA.-
Keywords:
- Si-based laser,
- continuous-wave lasing,
- wafer bonding
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References
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Proportional views
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