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1 |
Novel SOI double-gate MOSFET with a P-type buried layer
Yao Guoliang, Luo Xiaorong, Wang Qi, Jiang Yongheng, Wang Pei, et al.
Journal of Semiconductors, 2012, 33(5): 054006. doi: 10.1088/1674-4926/33/5/054006
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2 |
Tunable filters based on an SOI nano-wire waveguide micro ring resonator
Li Shuai, Wu Yuanda, Yin Xiaojie, An Junming, Li Jianguang, et al.
Journal of Semiconductors, 2011, 32(8): 084007. doi: 10.1088/1674-4926/32/8/084007
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3 |
Process optimization of a deep trench isolation structure for high voltage SOI devices
Zhu Kuiying, Qian Qinsong, Zhu Jing, Sun Weifeng
Journal of Semiconductors, 2010, 31(12): 124009. doi: 10.1088/1674-4926/31/12/124009
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4 |
A new integrated SOI power device based on self-isolation technology
Gao Huanmei, Luo Xiaorong, Zhang Wei, Deng Hao, Lei Tianfei, et al.
Journal of Semiconductors, 2010, 31(8): 084012. doi: 10.1088/1674-4926/31/8/084012
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5 |
A three-dimensional breakdown model of SOI lateral power transistors with a circular layout
Guo Yufeng, Wang Zhigong, Sheu Gene
Journal of Semiconductors, 2009, 30(11): 114006. doi: 10.1088/1674-4926/30/11/114006
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6 |
Total Dose Irradiation of FD SOI NMOSFET UnderDifferent Bias Configurations
Wang Ningjuan, Liu Zhongli, Li Ning, Yu Fang, Li Guohua, et al.
Chinese Journal of Semiconductors , 2007, 28(5): 750-754.
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7 |
Dual Material Gate SOI MOSFET with a Single Halo
Li Zunchao, Jiang Yaolin, Wu Jianmin
Chinese Journal of Semiconductors , 2007, 28(3): 327-331.
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8 |
Fabrication of a Novel SOI Material with Non-Planar Buried Oxide Layer
Guo Yufeng, Li Zhaoji, Zhang Bo, Liu Yong
Chinese Journal of Semiconductors , 2007, 28(9): 1415-1419.
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9 |
Fabrication of Monolithic Silicon Multi-Sensor on SOI Wafer
Xu Jingbo, Zhao Yulong, Jiang Zhuangde, Zhang Dacheng, Yang Fang, et al.
Chinese Journal of Semiconductors , 2007, 28(2): 302-307.
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10 |
Design and Optimization of SOI Piezoresistive MicrocantileverSensors for Use in Surface Stress Measurement
Zhuang Zhiwei, Wang Zheyao, Liu Litian
Chinese Journal of Semiconductors , 2006, 27(10): 1844-1850.
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11 |
An Analytical Expression of Free Carrier Lifetime in an SOI Rib Waveguide Used for Raman Amplification
Chen Mingyi, Mao Luhong, Hao Xianren, Zhang Shilin, Guo Weilian, et al.
Chinese Journal of Semiconductors , 2006, 27(7): 1310-1315.
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12 |
A Highly Heat-Dissipating SOI High Voltage Power Device with a Variable k Dielectric Buried Layer
Luo Xiaorong, Li Zhaoji, Zhang Bo
Chinese Journal of Semiconductors , 2006, 27(10): 1832-1837.
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13 |
An ADI Method for the Breakdown Voltage Analysis of Thin-Film SOI RESURF Structure with the High-Order Compact Finite Difference
Yu Zongguang, Liu Zhan, Wang Guozhang, Xu Ziming
Chinese Journal of Semiconductors , 2006, 27(2): 354-357.
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14 |
Study on the Characteristics of SOI DTMOS with Reverse Schottky Barriers
Bi Jinshun, Hai Chaohe
Chinese Journal of Semiconductors , 2006, 27(9): 1526-1530.
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15 |
SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm
Li Ruizhen, Li Duoli, Du Huan, Hai Chaohe, Han Zhengsheng, et al.
Chinese Journal of Semiconductors , 2006, 27(5): 796-803.
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16 |
Fabrication of SOI Material Using Low Temperature Bonding Technology
Zhan Da, Ma Xiaobo, Liu Weili, Song Zhitang, Feng Songlin, et al.
Chinese Journal of Semiconductors , 2006, 27(S1): 189-192.
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17 |
Study of Improved Performance of SOI Devices and Circuits
Hai Chaohe, Han Zhengsheng, Zhou Xiaoyin, Zhao Lixin, Li Duoli, et al.
Chinese Journal of Semiconductors , 2006, 27(S1): 322-327.
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18 |
Characteristics of a 0.1μm SOI Grooved Gate pMOSFET
Shao Hongxu, Sun Baogang, Wu Junfeng, Zhong Xinghua
Chinese Journal of Semiconductors , 2005, 26(11): 2080-2084.
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19 |
A High Breakdown Voltage Thin SOI Device with a Vertically Linearly Graded Concentration Drift Region
Lu Shengli, Sun Zhilin, Sun Weifeng, Shi Longxing
Chinese Journal of Semiconductors , 2005, 26(12): 2286-2289.
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20 |
A Modified DSOI Device
JIANG Bo, HE Ping, TIAN Li-lin, LIN Xi
Chinese Journal of Semiconductors , 2002, 23(9): 966-971.
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