Chin. J. Semicond. > 2001, Volume 22 > Issue 8 > 1025-1029
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CONTENTS

ZnAl_2O_4/α-Al_2O_3衬底上GaN的生长

毕朝霞 , 张荣 , 李卫平 , 殷江 , 沈波 , 周玉刚 , 陈鹏 , 陈志忠 , 顾书林 , 施毅 , 刘治国 and 郑有炓

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Key words: GaN, ZnAl2O4, MOCVD, X射线衍射(XRD), 扫描电子显微镜(SEM)

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(8): 1025-1029
      毕朝霞, 张荣, 李卫平, 殷江, 沈波, 周玉刚, 陈鹏, 陈志忠, 顾书林, 施毅, 刘治国, 郑有炓. ZnAl_2O_4/α-Al_2O_3衬底上GaN的生长[J]. 半导体学报(英文版), 2001, 22(8): 1025-1029.
      Citation:
      毕朝霞, 张荣, 李卫平, 殷江, 沈波, 周玉刚, 陈鹏, 陈志忠, 顾书林, 施毅, 刘治国, 郑有炓. ZnAl_2O_4/α-Al_2O_3衬底上GaN的生长[J]. 半导体学报(英文版), 2001, 22(8): 1025-1029.
      shu

      • Received Date: 2015-08-20

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