| Citation: |
Zheng Xuefeng, Hao Yue, Liu Hongxia, Ma Xiaohua. Degradation in Flash Memory Under Low Electric Field Stress[J]. Journal of Semiconductors, 2005, 26(12): 2428-2432.
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Zheng X F, Hao Y, Liu H X, Ma X H. Degradation in Flash Memory Under Low Electric Field Stress[J]. Chin. J. Semicond., 2005, 26(12): 2428.
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Degradation in Flash Memory Under Low Electric Field Stress
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Abstract
Based on the negative gate source-side erased flash memory cell,three conduction mechanisms causing stress-induced leakage current are studied.The voltage shifts which cause steady-state and transient currents are measured by new experimental methods.The reliability of flash memory cells is investigated using the capacitance coupling effect model.The results show that the cell reliability under a low electric field stress is mainly affected by the carriers charging and discharging inside the oxide. -
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