Chin. J. Semicond. > 2001, Volume 22 > Issue 10 > 1306-1309
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超薄栅n-MOSFETs热载流子寿命预测模型

穆甫臣 , 许铭真 , 谭长华 and 段小蓉

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Key words: HCI, 热载流子效应, n-MOSFET, 寿命预测

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(10): 1306-1309
      穆甫臣, 许铭真, 谭长华, 段小蓉. 超薄栅n-MOSFETs热载流子寿命预测模型[J]. 半导体学报(英文版), 2001, 22(10): 1306-1309.
      Citation:
      穆甫臣, 许铭真, 谭长华, 段小蓉. 超薄栅n-MOSFETs热载流子寿命预测模型[J]. 半导体学报(英文版), 2001, 22(10): 1306-1309.
      shu

      • Received Date: 2015-08-20

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