| Citation: |
Niu Zhenhong, Guo Qi, Ren Diyuan, Liu Gang, Gao Song. Total Dose Gamma Irradiation Effects and AnnealingCharacteristics of a SiGe HBT[J]. Journal of Semiconductors, 2006, 27(9): 1608-1611.
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Niu Z H, Guo Q, Ren D Y, Liu G, Gao S. Total Dose Gamma Irradiation Effects and AnnealingCharacteristics of a SiGe HBT[J]. Chin. J. Semicond., 2006, 27(9): 1608.
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Total Dose Gamma Irradiation Effects and AnnealingCharacteristics of a SiGe HBT
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Abstract
The total-dose radiation effects and annealing characteristics of a SiGe HBT are studied.It is found that the degradation of the current gain is dominated by the increase of Ib.The mechanisms behind the post-damage effects of total-dose radiation are discussed.The chief factor that causes post-damage effects is the increase in the interface states.-
Keywords:
- SiGe HBT,
- ionizing radiation,
- annealing,
- post-damage effect
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References
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Proportional views
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