Chin. J. Semicond. > 2002, Volume 23 > Issue 2 > 120-123
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立方相GaN的高温MOCVD生长(英文)

付羿 , 孙元平 , 沈晓明 , 李顺峰 , 冯志宏 , 段俐宏 , 王海 and 杨辉

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Key words: 立方相, GaN, MOCVD

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(2): 120-123
      付羿, 孙元平, 沈晓明, 李顺峰, 冯志宏, 段俐宏, 王海, 杨辉. 立方相GaN的高温MOCVD生长(英文)[J]. 半导体学报(英文版), 2002, 23(2): 120-123.
      Citation:
      付羿, 孙元平, 沈晓明, 李顺峰, 冯志宏, 段俐宏, 王海, 杨辉. 立方相GaN的高温MOCVD生长(英文)[J]. 半导体学报(英文版), 2002, 23(2): 120-123.
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      • Received Date: 2015-08-19

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