Chin. J. Semicond. > 2006, Volume 27 > Issue 8 > 1391-1395

PAPERS

Growth and Properties of High Quality InAs Single Crystals

Zhao Youwen, Sun Wenrong, Duan Manlong, Dong Zhiyuan, Yang Zixiang, Lü Xuru and Wang Yingli

+ Author Affiliations

PDF

Abstract: We grow 50mm-diameter InAs single crystals of 〈100〉 and 〈111〉 orientations with liquid encapsulated Czochralski (LEC) method.The segregation behavior,lattice hardening effect,and doping efficiency of n-type impurities S, Sn and p-type impurities Zn, Mn are studied.The lattice perfection of the InAs single crystal is studied with X-ray diffraction.The polishing,chemical etching and cleaning of an InAs wafer are analyzed.An epi-ready InAs polished single crystal wafer is realized.

Key words: indium arsenidedopingpolishing

1

Investigating the doping performance of an ionic dopant for organic semiconductors and thermoelectric applications

Jing Guo, Yaru Feng, Jinjun Zhang, Jing Zhang, Ping−An Chen, et al.

Journal of Semiconductors. doi: 10.1088/1674-4926/25010027

2

Progress in efficient doping of Al-rich AlGaN

Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Xuzhou Fang, et al.

Journal of Semiconductors, 2024, 45(2): 021501. doi: 10.1088/1674-4926/45/2/021501

3

Improved efficiency and photo-stability of methylamine-free perovskite solar cells via cadmium doping

Yong Chen, Yang Zhao, Qiufeng Ye, Zema Chu, Zhigang Yin, et al.

Journal of Semiconductors, 2019, 40(12): 122201. doi: 10.1088/1674-4926/40/12/122201

4

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

Jia Yunpeng, Su Hongyuan, Jin Rui, Hu Dongqing, Wu Yu, et al.

Journal of Semiconductors, 2016, 37(2): 024008. doi: 10.1088/1674-4926/37/2/024008

5

Deposition and doping of CdS/CdTe thin film solar cells

Nima E. Gorji

Journal of Semiconductors, 2015, 36(5): 054001. doi: 10.1088/1674-4926/36/5/054001

6

A novel DTSCR with a variation lateral base doping structure to improve turn-on speed for ESD protection

Jizhi Liu, Zhiwei Liu, Ze Jia, Juin. J Liou

Journal of Semiconductors, 2014, 35(6): 064010. doi: 10.1088/1674-4926/35/6/064010

7

A simulation of doping and trap effects on the spectral response of AlGaN ultraviolet detectors

Sidi Ould Saad Hamady

Journal of Semiconductors, 2012, 33(3): 034002. doi: 10.1088/1674-4926/33/3/034002

8

Influence of absorber doping in a-SiC:H/a-Si:H/a-SiGe:H solar cells

Muhammad Nawaz, Ashfaq Ahmad

Journal of Semiconductors, 2012, 33(4): 042001. doi: 10.1088/1674-4926/33/4/042001

9

Effect of magnesium doping on the light-induced hydrophilicity of ZnO thin films

Huang Kai, Lü Jianguo, Zhang Li, Tang Zhen, Yu Jiangying, et al.

Journal of Semiconductors, 2012, 33(5): 053003. doi: 10.1088/1674-4926/33/5/053003

10

Effect of rhenium doping on various physical properties of single crystals of MoSe2

Mihir M. Vora, Aditya M. Vora

Journal of Semiconductors, 2012, 33(1): 012001. doi: 10.1088/1674-4926/33/1/012001

11

Modeling and experimental research on a removal mechanism during chemical mechanical polishing at the molecular scale

An Wei, Zhao Yongwu, Wang Yongguang

Journal of Semiconductors, 2010, 31(11): 116005. doi: 10.1088/1674-4926/31/11/116005

12

A new double gate SOI LDMOS with a step doping profile in the drift region

Luo Xiaorong, Zhang Wei, Gu Jingjing, Liao Hong, Zhang Bo, et al.

Journal of Semiconductors, 2009, 30(8): 084006. doi: 10.1088/1674-4926/30/8/084006

13

An Electroluminescence and Emission Mechanism for Small Molecular Doped Polymer Light-Emitting Diodes

Nie Hai, Tang Xianzhong, Chen Zhu, Wu Lijuan

Journal of Semiconductors, 2008, 29(8): 1575-1580.

14

Influence of ITO Surface Treatment on Performance of Organic Light-Emitting Devices

Wang Jing, Jiang Wenlong, Wang Guangde, Wang Lizhong, Wang Jin, et al.

Chinese Journal of Semiconductors , 2007, 28(8): 1312-1315.

15

Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS

Sun Weifeng, Yi Yangbo, Lu Shengli, Shi Longxing

Chinese Journal of Semiconductors , 2006, 27(6): 976-981.

16

An Improved Angle Polishing Method for Measuring Subsurface Damage in Silicon Wafers

Huo Fengwei, Kang Renke, Guo Dongming, Zhao Fuling, Jin Zhuji, et al.

Chinese Journal of Semiconductors , 2006, 27(3): 506-510.

17

Analysis of an InP/InGaAs/InP DHBT with Composite Doping Collector

Sun Hao, Qi Ming, Xu Anhuai, Ai Likun, Su Shubing, et al.

Chinese Journal of Semiconductors , 2006, 27(8): 1431-1435.

18

Strain Compensation in SiGe by Boron Doping

Cheng Buwen, Yao Fei, Xue Chunlai, Zhang Jianguo, Li Chuanbo, et al.

Chinese Journal of Semiconductors , 2005, 26(S1): 39-41.

19

High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

Wang Xiaofeng, Zeng Yiping, Wang Baoqiang, Zhu Zhanping, Du Xiaoqing, et al.

Chinese Journal of Semiconductors , 2005, 26(9): 1692-1698.

20

Unified Breakdown Model of SOI RESURF Device with Uniform/Step/Linear Doping Profile

Guo Yufeng, Zhang Bo, Mao Ping, Li Zhaoji,and Liu Quanwang

Chinese Journal of Semiconductors , 2005, 26(2): 243-249.

  • Search

    Advanced Search >>

    GET CITATION

    Zhao Youwen, Sun Wenrong, Duan Manlong, Dong Zhiyuan, Yang Zixiang, Lü Xuru, Wang Yingli. Growth and Properties of High Quality InAs Single Crystals[J]. Journal of Semiconductors, 2006, 27(8): 1391-1395.
    Zhao Y W, Sun W R, Duan M L, Dong Z Y, Yang Z X, Lü X, Wang Y L. Growth and Properties of High Quality InAs Single Crystals[J]. Chin. J. Semicond., 2006, 27(8): 1391.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3040 Times PDF downloads: 1926 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 August 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhao Youwen, Sun Wenrong, Duan Manlong, Dong Zhiyuan, Yang Zixiang, Lü Xuru, Wang Yingli. Growth and Properties of High Quality InAs Single Crystals[J]. Journal of Semiconductors, 2006, 27(8): 1391-1395. ****Zhao Y W, Sun W R, Duan M L, Dong Z Y, Yang Z X, Lü X, Wang Y L. Growth and Properties of High Quality InAs Single Crystals[J]. Chin. J. Semicond., 2006, 27(8): 1391.
      Citation:
      Zhao Youwen, Sun Wenrong, Duan Manlong, Dong Zhiyuan, Yang Zixiang, Lü Xuru, Wang Yingli. Growth and Properties of High Quality InAs Single Crystals[J]. Journal of Semiconductors, 2006, 27(8): 1391-1395. ****
      Zhao Y W, Sun W R, Duan M L, Dong Z Y, Yang Z X, Lü X, Wang Y L. Growth and Properties of High Quality InAs Single Crystals[J]. Chin. J. Semicond., 2006, 27(8): 1391.

      Growth and Properties of High Quality InAs Single Crystals

      • Received Date: 2015-08-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return