| Citation: |
Zhao Youwen, Sun Wenrong, Duan Manlong, Dong Zhiyuan, Yang Zixiang, Lü Xuru, Wang Yingli. Growth and Properties of High Quality InAs Single Crystals[J]. Journal of Semiconductors, 2006, 27(8): 1391-1395.
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Zhao Y W, Sun W R, Duan M L, Dong Z Y, Yang Z X, Lü X, Wang Y L. Growth and Properties of High Quality InAs Single Crystals[J]. Chin. J. Semicond., 2006, 27(8): 1391.
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Growth and Properties of High Quality InAs Single Crystals
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Abstract
We grow 50mm-diameter InAs single crystals of 〈100〉 and 〈111〉 orientations with liquid encapsulated Czochralski (LEC) method.The segregation behavior,lattice hardening effect,and doping efficiency of n-type impurities S, Sn and p-type impurities Zn, Mn are studied.The lattice perfection of the InAs single crystal is studied with X-ray diffraction.The polishing,chemical etching and cleaning of an InAs wafer are analyzed.An epi-ready InAs polished single crystal wafer is realized.-
Keywords:
- indium arsenide,
- doping,
- polishing
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References
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Proportional views
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