Chin. J. Semicond. > 2001, Volume 22 > Issue 10 > 1235-1239
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6H-SiC单极功率器件性能的温度关系(英文)

何进 and 张兴

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Key words: 宽禁带半导体器件, 6H-SiC, 电离系数, 雪崩击穿, 比导通电阻, 温度关系

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(10): 1235-1239
      何进, 张兴. 6H-SiC单极功率器件性能的温度关系(英文)[J]. 半导体学报(英文版), 2001, 22(10): 1235-1239.
      Citation:
      何进, 张兴. 6H-SiC单极功率器件性能的温度关系(英文)[J]. 半导体学报(英文版), 2001, 22(10): 1235-1239.
      shu

      • Received Date: 2015-08-20

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