Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 426-429
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DC Performance of InGaP/GaAs HBT with Two Different Structures。

Lin Ling, Xu Anhuai, Sun Xiaowei and Qi Ming

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Abstract: ：InGaP/GaAs HBT is the most promising device in microwave and millimeter wave fields .It's DC characteristic is one of the most important parameters.In this work，the Medici program was used to simulate the DC and high frequency per· formances of two different InGaP/GaAs HBT epitaxial structures.The large size(emitter area is l00um x 100um) doublemesa InGaP/GaAs HBTs were fabricated，and their DC performance was tested and analyzed experimentally.It was shown that the common emitter current gains by the test for these two structures were 50 and 350 respectively and their maximum fT bv the simulation were 8 and 10GHz respectively.

Key words: heterojunction bipolar transistor, InGaP/GaAs DC performance

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 426-429
      Lin Ling, Xu Anhuai, Sun Xiaowei, Qi Ming. DC Performance of InGaP/GaAs HBT with Two Different Structures。[J]. Journal of Semiconductors, 2007, 28(S1): 426-429. ****Lin L, Xu A H, Sun X W, Qi M. DC Performance of InGaP/GaAs HBT with Two Different Structures。[J]. Chin. J. Semicond., 2007, 28(S1): 426.
      Citation:
      Lin Ling, Xu Anhuai, Sun Xiaowei, Qi Ming. DC Performance of InGaP/GaAs HBT with Two Different Structures。[J]. Journal of Semiconductors, 2007, 28(S1): 426-429. ****
      Lin L, Xu A H, Sun X W, Qi M. DC Performance of InGaP/GaAs HBT with Two Different Structures。[J]. Chin. J. Semicond., 2007, 28(S1): 426.
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      DC Performance of InGaP/GaAs HBT with Two Different Structures。

      • State Key Laboratory of Functional Materials for lnformatics，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

      • Graduate University of the Chinese Academy of Sciences，Beijing 100049，China,State Key Laboratory of Functional Materials for lnformatics，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China,State Key Laboratory of Functional Materials for lnformatics，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China and State Key Laboratory of Functional Materials for lnformatics，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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