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1 |
Contact size scaling of a W-contact phase-change memory cell based on numerical simulation
Wei Yiqun, Lin Xinnan, Jia Yuchao, Cui Xiaole, Zhang Xing, et al.
Journal of Semiconductors, 2012, 33(10): 104006. doi: 10.1088/1674-4926/33/10/104006
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2 |
Simulation for signal charge transfer of charge coupled devices
Wang Zujun, Liu Yinong, Chen Wei, Tang Benqi, Xiao Zhigang, et al.
Journal of Semiconductors, 2009, 30(12): 124007. doi: 10.1088/1674-4926/30/12/124007
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3 |
A Guide System in φ200mm CZ-Si Growth
Ren Bingyan, Chu Shijun, Wu Xin, Yu Jianxiu, Sun Xiuju, et al.
Journal of Semiconductors, 2008, 29(9): 1790-1793.
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4 |
Effect of Rapid Thermal Annealing Ambient on Gettering Efficiency and Surface Microstructure in 300mm CZ Silicon Wafers
Feng Quanlin, He Ziqiang, Chang Qing, Zhou Qigang
Journal of Semiconductors, 2008, 29(5): 822-826.
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5 |
Radial Distribution of Grown-In Oxygen Precipitates in a 300mm Nitrogen-Doped Czochralski Silicon Wafer
Tian Daxi, Ma Xiangyang, Zeng Yuheng, Yang Deren, Que Duanlin, et al.
Journal of Semiconductors, 2008, 29(1): 123-127.
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6 |
Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD
Gao Lihua, Yang Yunke, Chen Haixin, Fu Song
Chinese Journal of Semiconductors , 2007, 28(S1): 245-248.
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7 |
Dislocations and Microdefects in Large Diameter SI-GaAs。
Zhao Yanqiao, Liu Caichi, Hao Qiuyan, Sun Weizhong
Chinese Journal of Semiconductors , 2007, 28(S1): 133-136.
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8 |
Magnetic Viscosity of Si Melt Under a Magnetic Field
Zhang Wen, Xu Yuesheng, Wang Shengli
Chinese Journal of Semiconductors , 2007, 28(1): 65-68.
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9 |
2D Numerical Simulation of Sacrificial Layer Etching
Li Yanhui, Li Weihua
Chinese Journal of Semiconductors , 2006, 27(7): 1321-1325.
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10 |
Numerical Simulation and Theoretical Analysis of Photonic Crystal Single-Defect Cavity Based on nc-Ge/Si Islands
Tang Haixia, Wang Qiming
Chinese Journal of Semiconductors , 2006, 27(12): 2139-2143.
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11 |
Numerical Simulation of Si/Si1-xGex Resonant Tunneling Diode at Room Temperature
Li Tao, Yu Zhiping, Wang Yan, Huang Lei, 向采兰, et al.
Chinese Journal of Semiconductors , 2006, 27(5): 869-873.
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12 |
Numerical Simulation and Analysis of SiGeC/Si Heterojunction Power Diodes
Gao Yong, Liu Jing, Ma Li, Yu Mingbin
Chinese Journal of Semiconductors , 2006, 27(6): 1068-1072.
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13 |
Effect of Pre-Rapid Thermal Annealing on FPDs and Denuded Zones in Large-Diameter CZ-Si
Zhang Jianqiang, Liu Caichi, Zhou Qigang, Wang Jing, Hao Qiuyan, et al.
Chinese Journal of Semiconductors , 2006, 27(1): 73-77.
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14 |
Effect of Rapid Thermal Annealing Ambient on Denuded Zone and Oxygen Precipitates in a 300mm Silicon Wafer
Feng Quanlin, Shi Xunda, Liu Bin, Liu Zuoxing, Wang Jing, et al.
Chinese Journal of Semiconductors , 2006, 27(1): 68-72.
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15 |
硅腐蚀停止技术制备超薄硅膜中的分形现象
杨道虹, 徐晨, 董典红, 张剑铭, 阳启明, et al.
Chinese Journal of Semiconductors , 2005, 26(1): 67-71.
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16 |
SiGe/Ge/SiGe异质结构中自旋极化输运特性的模拟
邹建平, 田立林, 余志平
Chinese Journal of Semiconductors , 2005, 26(2): 299-303.
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17 |
300mm硅单晶的生长技术
Chinese Journal of Semiconductors , 2001, 22(3): 383-386.
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18 |
硅锥阴极中电子输运的数值模拟
Chinese Journal of Semiconductors , 1999, 20(11): 1015-1021.
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19 |
在磁场中的Bridgman－Hg_（1－x）Cd_xTe晶体生长数值模拟研究
Chinese Journal of Semiconductors , 1996, 17(7): 485-492.
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20 |
磁敏二极管的数值模拟
Chinese Journal of Semiconductors , 1990, 11(12): 931-936.
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