Chin. J. Semicond. > 1992, Volume 13 > Issue 9 > 564-572
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亚微米MOS场效应管的完全解析二维模型

汤庭鳌 and C.A.Paz de Araujo

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(9): 564-572
      汤庭鳌, C.A.Paz de Araujo. 亚微米MOS场效应管的完全解析二维模型[J]. 半导体学报(英文版), 1992, 13(9): 564-572.
      Citation:
      汤庭鳌, C.A.Paz de Araujo. 亚微米MOS场效应管的完全解析二维模型[J]. 半导体学报(英文版), 1992, 13(9): 564-572.
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      • Received Date: 2015-08-19

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