| Citation: |
Liu Bo, Song Zhitang, Feng Songlin, Chen Bomy. Effect of Si-Implantation on the Structure and Resistance of Ge2Sb2Te5[J]. Journal of Semiconductors, 2006, 27(S1): 158-160.
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Liu B, Song Z T, Feng S L, Chen B. Effect of Si-Implantation on the Structure and Resistance of Ge2Sb2Te5[J]. Chin. J. Semicond., 2006, 27(13): 158.
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Effect of Si-Implantation on the Structure and Resistance of Ge2Sb2Te5
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Abstract
Ge2Sb2Te5 films are deposited by RF magnetron sputtering on Si(100)/SiO2 substrates.Si ions are implanted into Ge2Sb2Te5 films.The effect of silicon implantation on the structure and sheet resistance of Ge2Sb2Te5 film is studied in detail using X-ray diffraction and four-point probe methods.It is indicated that the structure of crystalline Ge2Sb2Te5-Si is identified as a multi-phase structure,including of face-centered-cubic low temperature phase,hexagonal high temperature phase and crystalline Sb2Te3 phase with a rhombohedral structure.Silicon implantation has great effect on the resistance-annealing behaviour of Ge2Sb2Te5 film.The sheet resistance of crystalline Ge2Sb2Te5-Si film is higher than that of Ge2Sb2Te5 film when annealing temperature is higher than 400℃,which can reduce the operation current for the phase transition from crystalline to amorphous phase.The improvement of resistance-temperature reliability is beneficial for enlarging the operation current range.-
Keywords:
- Ge2Sb2Te5,
- silicon ion implantation doping,
- sheet resistance
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References
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Proportional views
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