Chin. J. Semicond. > 2002, Volume 23 > Issue 7 > 782-784

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GaN_(1-x)P_x三元合金的MOCVD生长

陈敦军 , 毕朝霞 , 沈波 , 张开骁 , 顾书林 , 张荣 , 施毅 , 胡立群 , 郑有炓 , 孙学浩 , 万寿科 and 王占国

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Key words: GaN1-xPx, MOCVD, 化学态, 红移

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(7): 782-784
      陈敦军, 毕朝霞, 沈波, 张开骁, 顾书林, 张荣, 施毅, 胡立群, 郑有炓, 孙学浩, 万寿科, 王占国. GaN_(1-x)P_x三元合金的MOCVD生长[J]. 半导体学报(英文版), 2002, 23(7): 782-784.
      Citation:
      陈敦军, 毕朝霞, 沈波, 张开骁, 顾书林, 张荣, 施毅, 胡立群, 郑有炓, 孙学浩, 万寿科, 王占国. GaN_(1-x)P_x三元合金的MOCVD生长[J]. 半导体学报(英文版), 2002, 23(7): 782-784.
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      • Received Date: 2015-08-19

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