Chin. J. Semicond. > 2004, Volume 25 > Issue 7 > 819-823
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硼离子选择注入制备多孔硅微阵列

陈少强 , 邵丽 , 王伟明 , 朱建中 and 朱自强

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Key words: 多孔硅微阵列, 选择性, 电化学腐蚀, 硼离子选择注入

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(7): 819-823
      陈少强, 邵丽, 王伟明, 朱建中, 朱自强. 硼离子选择注入制备多孔硅微阵列[J]. 半导体学报(英文版), 2004, 25(7): 819-823.
      Citation:
      陈少强, 邵丽, 王伟明, 朱建中, 朱自强. 硼离子选择注入制备多孔硅微阵列[J]. 半导体学报(英文版), 2004, 25(7): 819-823.
      shu

      • Received Date: 2015-08-19

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