Chin. J. Semicond. > 2007, Volume 28 > Issue 7 > 1144-1148

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A Novel Inline Type Microwave Power Sensor

Han Lei, Huang Qing'an and Liao Xiaoping

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Abstract: A novel structure of an inline type microwave power sensor is presented based on MEMS technology.The theory,design,fabrication,and measurements are given.The microwave power coupled from the CPW line is measured by the MEMS membrane.The fabrication process of this power sensor is fully compatible with a GaAs MMIC process.In this method the signal is available during power detection.The results show that the sensor has a reflection of less than -15dB and an insertion loss of less than 2.0dB up to 12GHz.The sensitivity of this power sensor is 10.4μV/mW at 10GHz.

Key words: microwave powerpower sensorinline typeMEMSGaAs MMIC process

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    代作晓, 陆书龙, 赵明山, 李国华. GaAs/AlGaAs多量子阱材料差分反射光谱[J]. 半导体学报(英文版), 2000, 21(11): 1099-1102.
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    Received: 18 August 2015 Revised: 02 March 2007 Online: Published: 01 July 2007

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      代作晓, 陆书龙, 赵明山, 李国华. GaAs/AlGaAs多量子阱材料差分反射光谱[J]. 半导体学报(英文版), 2000, 21(11): 1099-1102.
      Citation:
      Han Lei, Huang Qing'an, Liao Xiaoping. A Novel Inline Type Microwave Power Sensor[J]. Journal of Semiconductors, 2007, 28(7): 1144-1148. ****
      Han L, Huang Q, Liao X P. A Novel Inline Type Microwave Power Sensor[J]. Chin. J. Semicond., 2007, 28(7): 1144.

      A Novel Inline Type Microwave Power Sensor

      • Received Date: 2015-08-18
      • Accepted Date: 2007-01-05
      • Revised Date: 2007-03-02
      • Published Date: 2007-07-05

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