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Abstract: A novel structure of an inline type microwave power sensor is presented based on MEMS technology.The theory,design,fabrication,and measurements are given.The microwave power coupled from the CPW line is measured by the MEMS membrane.The fabrication process of this power sensor is fully compatible with a GaAs MMIC process.In this method the signal is available during power detection.The results show that the sensor has a reflection of less than -15dB and an insertion loss of less than 2.0dB up to 12GHz.The sensitivity of this power sensor is 10.4μV/mW at 10GHz.
Key words: microwave power, power sensor, inline type, MEMS, GaAs MMIC process
Article views: 3676 Times PDF downloads: 1626 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 02 March 2007 Online: Published: 01 July 2007
Citation: |
Han Lei, Huang Qing'an, Liao Xiaoping. A Novel Inline Type Microwave Power Sensor[J]. Journal of Semiconductors, 2007, 28(7): 1144-1148.
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Han L, Huang Q, Liao X P. A Novel Inline Type Microwave Power Sensor[J]. Chin. J. Semicond., 2007, 28(7): 1144.
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