Chin. J. Semicond. > 2001, Volume 22 > Issue 5 > 569-572
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InGaN光致发光性质与温度的关系

樊志军 , 刘祥林 , 万寿科 and 王占国

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Key words: InGaN, 变温, 光致发光

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(5): 569-572
      樊志军, 刘祥林, 万寿科, 王占国. InGaN光致发光性质与温度的关系[J]. 半导体学报(英文版), 2001, 22(5): 569-572.
      Citation:
      樊志军, 刘祥林, 万寿科, 王占国. InGaN光致发光性质与温度的关系[J]. 半导体学报(英文版), 2001, 22(5): 569-572.
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      • Received Date: 2015-08-20

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