Chin. J. Semicond. > 2001, Volume 22 > Issue 9 > 1119-1121
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碳对Si_(1-x-y)Ge_xC_y合金氧化的影响

王亚东 , 叶志镇 , 黄靖云 and 赵炳辉

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Key words: 锗硅碳薄膜, 氧化动力学, 替代碳

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(9): 1119-1121
      王亚东, 叶志镇, 黄靖云, 赵炳辉. 碳对Si_(1-x-y)Ge_xC_y合金氧化的影响[J]. 半导体学报(英文版), 2001, 22(9): 1119-1121.
      Citation:
      王亚东, 叶志镇, 黄靖云, 赵炳辉. 碳对Si_(1-x-y)Ge_xC_y合金氧化的影响[J]. 半导体学报(英文版), 2001, 22(9): 1119-1121.
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      • Received Date: 2015-08-20

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