Lateral Oxidation in Vertical Cavity Surface Emitting Lasers

Liu Wenli; Hao Yongqin; Wang Yuxia; Jiang Xiaoguang; Feng Yuan; Li Haijun; Zhong Jingchang

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Article Navigation > Journal of Semiconductors > 2006 > 27(8): 1351-1354

Liu Wenli, Hao Yongqin, Wang Yuxia, Jiang Xiaoguang, Feng Yuan, Li Haijun, Zhong Jingchang. Lateral Oxidation in Vertical Cavity Surface Emitting Lasers[J]. Journal of Semiconductors, 2006, 27(8): 1351-1354. ****Liu W L, Hao Y Q, Wang Y X, Jiang X G, Feng Y, Li H J, Zhong J C. Lateral Oxidation in Vertical Cavity Surface Emitting Lasers[J]. Chin. J. Semicond., 2006, 27(8): 1351.

Citation:

Liu Wenli, Hao Yongqin, Wang Yuxia, Jiang Xiaoguang, Feng Yuan, Li Haijun, Zhong Jingchang. Lateral Oxidation in Vertical Cavity Surface Emitting Lasers[J]. Journal of Semiconductors, 2006, 27(8): 1351-1354. ****

Liu W L, Hao Y Q, Wang Y X, Jiang X G, Feng Y, Li H J, Zhong J C. Lateral Oxidation in Vertical Cavity Surface Emitting Lasers[J]. Chin. J. Semicond., 2006, 27(8): 1351.

Citation:

Liu W L, Hao Y Q, Wang Y X, Jiang X G, Feng Y, Li H J, Zhong J C. Lateral Oxidation in Vertical Cavity Surface Emitting Lasers[J]. Chin. J. Semicond., 2006, 27(8): 1351.

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Lateral Oxidation in Vertical Cavity Surface Emitting Lasers

National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China
National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130023,China
National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130024,China
National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130025,China
National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130026,China
National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130027,China
National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130028,China

Received Date: 2015-08-20

Abstract

Abstract

Lateral oxidation in vertical cavity surface emitting lasers (VCSELs) is described,and its characteristics are investigated.A linear growth law is found for stripe mesas.However,oxide growth (above 435℃) follows a nonlinear law for the two geometry mesa structures which we employ in VCSEL.Theoretical analysis indicates that mesa structure geometry influences oxide growth rate at higher temperatures.
- lateral oxidation,
- quantum well,
- vertical cavity surface emitting laser

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