Chin. J. Semicond. > 1996, Volume 17 > Issue 4 > 294-299
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自对准外延CoSi_2源漏接触CMOS器件技术

邵凯，李炳宗，邹斯洵，黄维宁，吴卫军，房华，於伟峰，姜国宝，俞波，张敏

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    Received: 18 August 2015 Revised: Online: Published: 01 April 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(4): 294-299
      邵凯，李炳宗，邹斯洵，黄维宁，吴卫军，房华，於伟峰，姜国宝，俞波，张敏. 自对准外延CoSi_2源漏接触CMOS器件技术[J]. 半导体学报(英文版), 1996, 17(4): 294-299.
      Citation:
      邵凯，李炳宗，邹斯洵，黄维宁，吴卫军，房华，於伟峰，姜国宝，俞波，张敏. 自对准外延CoSi_2源漏接触CMOS器件技术[J]. 半导体学报(英文版), 1996, 17(4): 294-299.
      shu

      • Received Date: 2015-08-18

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