Abstract: A 1200V multi-region double RESURF LDMOS with a p-type buried layer,which has multiple p regions in the n-drift layer of a single RESURF structure is proposed for improving the surface electric field,increasing the concentration of the n-drift layer,and reducing the on-resistance of LDMOS.A 1200V BCD technology based on standard CMOS technology is realized by adding pn isolation and p-top implantation.Using this technology we develop a power half bridge driver.The breakdown voltages of the LDMOS,nMOS, and pMOS are 1210,43.8,and -27V,respectively, the BVceo of the npn is 76V in the driver.The 1200V BCD technology thus can be used in the design of HVIC.

Key words: MR,  LDMOS,  RESURF,  BCD technology