Chin. J. Semicond. > 2004, Volume 25 > Issue 7 > 836-840
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双异质结双平面掺杂HEMT器件的电荷控制模型

陈震 , 刘新宇 and 吴德馨

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Key words: 高电子迁移率晶体管(HEMT), 电荷控制模型, 异质结, 二维电子气, 双平面掺杂

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(7): 836-840
      陈震, 刘新宇, 吴德馨. 双异质结双平面掺杂HEMT器件的电荷控制模型[J]. 半导体学报(英文版), 2004, 25(7): 836-840.
      Citation:
      陈震, 刘新宇, 吴德馨. 双异质结双平面掺杂HEMT器件的电荷控制模型[J]. 半导体学报(英文版), 2004, 25(7): 836-840.
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      • Received Date: 2015-08-19

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