Chin. J. Semicond. > 1994, Volume 15 > Issue 6 > 393-396
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Ⅲ族锢源对LP－MOVPE方法生长In1－xGaxAs材料的影响

祝进田，胡礼中，刘式墉

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    Received: 18 August 2015 Revised: Online: Published: 01 June 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(6): 393-396
      祝进田，胡礼中，刘式墉. Ⅲ族锢源对LP－MOVPE方法生长In1－xGaxAs材料的影响[J]. 半导体学报(英文版), 1994, 15(6): 393-396.
      Citation:
      祝进田，胡礼中，刘式墉. Ⅲ族锢源对LP－MOVPE方法生长In1－xGaxAs材料的影响[J]. 半导体学报(英文版), 1994, 15(6): 393-396.
      shu

      • Received Date: 2015-08-18

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